LLE16350X Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
LLE16350X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_CBO
V_CER
V_CEO
V_EBO
I_C
P_i
P_tot
T_stg
T_j
T_sld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
DC collector current
input power
total power dissipation
storage temperature
junction temperature
soldering temperature
CONDITIONS
MIN. MAX. UNIT
open emitter
−
45 V
R_BE = 220 Ω
open base
−
30 V
−
15 V
open collector
−
3
V
−
f = 1.65 GHz; V_CE = 24 V; class AB −
T_mb = 75 °C
−
−65
−
6
A
8
W
50 W
+150 °C
200 °C
t ≤ 10 s; note 1
−
235 °C
Note
1. Up to 0.2 mm from ceramic.
MBD760
10
60
P _tot
IC
(W)
(A)
40
Ι ΙΙ
1
20
MEA577
10 ¹
1
10
VCE (V)
10 ²
T_mb ≤ 75 °C.
(I) Region of permissible DC operation.
(II) Permissible extension provided R_BE ≤ 220 Ω.
Fig.2 DC SOAR.
0
0
50
100
150
200
Tmb ( ^o C)
Fig.3 Power derating curve.
1997 Feb 03
3