JC559 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose transistor

Philips Semiconductors
PNP general purpose transistor
Product specification
JC559
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
V_CEsat
V_BEsat
V_BE
C_c
C_e
f_T
F
collector cut-off current
emitter cut-off current
I_E = 0; V_CB = −30 V
−
I_E = 0; V_CB = −30 V; T_j = 150 °C
−
I_C = 0; V_EB = −5 V
−
DC current gain
I_C = −2 mA; V_CE = −5 V
125
see Fig 2
collector-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA; note 1
−
I_C = −100 mA; I_B = −5 mA; note 1
−
base-emitter saturation voltage I_C = −10 mA; I_B = −0.5 mA; note 1
−
base-emitter voltage
I_C = −100 mA; I_B = −5 mA; note 1
I_C = −2 mA; V_CE = −5 V; note 2
I_C = −10 mA; V_CE = −5 V; note 2
−
−600
−
collector capacitance
emitter capacitance
transition frequency
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = −500 mV; f = 1 MHz −
I_C = −10 mA; V_CE = −5 V; f = 100 MHz 100
noise figure
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ; −
f = 10 Hz to 15.7 kHz
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ; −
f = 1 kHz; B = 200 Hz
−1
−
−
−
−60
−180
−750
−930
−650
−
4
12
−
−
−
−15
−4
−100
800
−300
−650
−
−
−750
−820
−
−
−
4
4
nA
µA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
dB
Notes
1. V_BEsat decreases by about −1.7 mV/K with increasing temperature.
2. V_BE decreases by about −2 mV/K with increasing temperature.
1999 Apr 27
3