JC556 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose transistors

Philips Semiconductors
PNP general purpose transistors
Product specification
JC556; JC557; JC558
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
h_FE
V_CEsat
V_BEsat
emitter cut-off current
DC current gain
JC556B; JC557B; JC558B
collector-emitter saturation
voltage
base-emitter saturation voltage
V_BE
base-emitter voltage
C_c
collector capacitance
C_e
emitter capacitance
f_T
transition frequency
F
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
I_E = 0; V_CB = −30 V
I_E = 0; V_CB = −30 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
I_C = −2 mA; V_CE = −5 V; see Fig.2
−
−1 −15 nA
−
−
−4 µA
−
−
100 nA
220 −
475
I_C = −10 mA; I_B = −0.5 mA
I_C = −100 mA; I_B = −5 mA
I_C = −10 mA; I_B = −0.5 mA; note 1
I_C = −100 mA; I_B = −5 mA; note 1
I_C = −2 mA; V_CE = −5 V; note 2
I_C = −10 mA; V_CE = −5 V; note 2
I_E = i_e = 0; V_CE = −10 V; f = 1 MHz
I_C = i_c = 0; V_EB = −500 mV; f = 1 MHz
I_C = −10 mA; V_CE = −5 V; f = 100 MHz
I_C = −200 µA; V_CE = −5 V; R_S = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
−
−
−600
−
−
−
100
−
−60
−180
−750
−930
−650
−
4
10
−
−
−300
−650
−
−
−750
−820
−
−
−
10
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
Notes
1. V_BEsat decreases by about −1.7 mV/K with increasing temperature.
2. V_BE decreases by about −2 mV/K with increasing temperature.
1999 Apr 27
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