JC501 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN general purpose transistor

Philips Semiconductors
NPN general purpose transistor
Product specification
JC501
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I_CBO
I_EBO
h_FE
h_FE
V_CEsat
V_BEsat
V_BE
C_c
C_e
f_T
F
collector cut-off current
emitter cut-off current
I_E = 0; V_CB = 45 V
−
−
15 nA
I_E = 0; V_CB = 45 V; T_j = 125 °C
−
−
4
µA
I_C = 0; V_EB = 6 V
−
−
100 nA
DC current gain
I_C = 1 mA; V_CE = 5 V
135 −
600
DC current gain
JC501P
I_C = 1 mA; V_CE = 5 V
135 −
270
JC501Q
200 −
400
JC501R
300 −
600
collector-emitter saturation voltage I_C = 10 mA; I_B = 0.5 mA
−
−
200 mV
base-emitter saturation voltage
I_C = 100 mA; I_B = 5 mA
I_C = 10 mA; I_B = 0.5 mA
I_C = 100 mA; I_B = 5 mA
−
−
600 mV
−
−
830 mV
−
−
1.06 V
base-emitter voltage
collector capacitance
emitter capacitance
I_C = 2 mA; V_CE = 5 V
550 −
700 mV
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz −
−
6
pF
I_C = i_c = 0; V_EB = 0.5 V; f = 1 MHz −
11.5 −
pF
transition frequency
I_C = 10 mA; V_CE = 5 V;
f = 100 MHz
−
130 −
MHz
noise figure
I_C = 200 µA; V_CE = 5 V;
−
−
10 dB
R_S = 2 kΩ; f = 1 kHz; B = 200 Hz
1999 Apr 27
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