JC337 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN general purpose transistor

Philips Semiconductors
NPN general purpose transistor
Product specification
JC337
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
0.2
UNIT
K/mW
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
JC337-25
I_E = 0; V_CB = 20 V
I_E = 0; V_CB = 20 V; T_j = 150 °C
I_C = 0; V_EB = 5 V
I_C = 100 mA; V_CE = 1 V
h_FE
V_CEsat
V_BE
C_c
f_T
DC current gain
I_C = 500 mA; V_CE = 1 V
collector-emitter saturation voltage I_C = 500 mA; I_B = 50 mA
base-emitter voltage
I_C = 500 mA; V_CE = 1 V; note 1
collector capacitance
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz
transition frequency
I_C = 10 mA; V_CE = 5 V; f = 100 MHz
MIN.
−
−
−
160
40
−
−
−
100
TYP.
−
−
−
−
−
−
−
5
−
MAX.
100
5
100
400
−
700
1.2
−
−
UNIT
nA
µA
nA
mV
V
pF
MHz
Note
1. V_BE decreases by about 2 mV/K with increasing temperature.
1999 Apr 27
3