JC327 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP general purpose transistor

Philips Semiconductors
PNP general purpose transistor
Product specification
JC327
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-a}
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit-board.
VALUE
0.2
UNIT
K/mW
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
h_FE
V_CEsat
V_BE
C_c
f_T
collector cut-off current
emitter cut-off current
I_E = 0; V_CB = −20 V
I_E = 0; V_CB = −20 V; T_j = 150 °C
I_C = 0; V_EB = −5 V
DC current gain
I_C = −100 mA; V_CE = −1 V
JC327-25
DC current gain
I_C = −500 mA; V_CE = −1 V
collector-emitter saturation voltage I_C = −500 mA; I_B = −50 mA
base-emitter voltage
I_C = −500 mA; V_CE = −1 V; note 1
collector capacitance
I_E = i_e = 0; V_CB = −10 V; f = 1 MHz
transition frequency
I_C = −10 mA; V_CE = −5 V;
f = 100 MHz
Note
1. V_BE decreases by about −2 mV/K with increasing temperature.
MIN. TYP. MAX. UNIT
−
−
−100 nA
−
−
−5 µA
−
−
−100 nA
160 −
40 −
−
−
−
−
−
8
80 −
400
−
−700
−1.2
−
−
mV
V
pF
MHz
1999 Apr 27
3