BZA900AVL Datasheet, PDF (3/11 Pages) NXP Semiconductors – Quadruple low capacitance ESD suppressor

Philips Semiconductors
Quadruple low capacitance ESD suppressor
Product specification
BZA900AVL series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per diode
I_Z
I_F
I_FSM
P_tot
P_ZSM
T_stg
T_j
ESD
working current
continuous forward current
non-repetitive peak forward current
total power dissipation
non repetitive peak reverse power
dissipation
storage temperature
junction temperature
electrostatic discharge
T_amb = 25 °C
−
T_amb = 25 °C
−
t_p = 1 ms; square pulse
−
T_amb = 25 °C; note 2; see Fig.5
−
square pulse; t_p = 1 ms
−
−65
−
IEC 61000-4-2 (contact discharge) 15
HBM MIL-Std 883
10
note 1 mA
200
mA
3.5
A
335
mW
6
W
+150 °C
150
°C
−
kV
−
kV
Notes
1. DC working current limited by P_tot(max).
2. Device mounted on standard printed-circuit board.
ESD STANDARDS COMPLIANCE
STANDARD
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
CONDITIONS
>15 kV (air); >8 kV (contact discharge)
>4 kV
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-a}
R_{th j-s}
PARAMETER
thermal resistance from junction to
ambient
thermal resistance from junction to
solder point; note 1
Note
1. Solder point of common anode (pin 2).
CONDITIONS
all diodes loaded
one diode loaded
all diodes loaded
VALUE
370
135
125
UNIT
K/W
K/W
K/W
2003 Oct 20
3