BYM99 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Ultra fast low-loss controlled avalanche rectifier

Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifier
Product specification
BYM99
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
V_(BR)R
I_R
reverse avalanche
breakdown voltage
reverse current
t_rr
reverse recovery time
C_d
diode capacitance
-d-d--I--t^R--
maximum slope of reverse
recovery current
CONDITIONS
I_F = 3 A; T_j = T_{j max}; see Fig. 7
I_F = 3 A; see Fig. 7
I_R = 0.1 mA
MIN.
−
−
700
V_R = V_RRMmax;
−
see Fig. 8
V_R = V_RRMmax; T_j = 150 °C;
−
see Fig. 8
when switched from I_F = 0.5 A
−
to I_R = 1 A; measured at
I_R = 0.25 A; see Fig. 12
f = 1 MHz; V_R = 0 V; see Fig. 9
−
when switched from I_F = 1 A to
−
V_R ≥ 30 V and dI_F/dt = −1 A/µs;
see Fig.11
TYP.
−
−
−
−
−
−
MAX.
1.95
3.60
−
UNIT
V
V
V
5 µA
75 µA
15 ns
135
− pF
−
3 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
K/W
75
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.10.
For more information please refer to the “General Part of associated Handbook”.
1996 Feb 19
3