BYM359X Datasheet, PDF (3/7 Pages) NXP Semiconductors – Dual diode fast, high-voltage

Philips Semiconductors
Dual diode
fast, high-voltage
Product specification
BYM359X
I
F
dI
F
dt
trr
time
Qs
I
R
I
rrm
25%
100%
Fig.1. Definition of t_rr, Q_s and I_rrm
PF / W
15
Vo = 1.25 V
Rs = 0.03 Ohms
10
5
BY329
Ths(max) / C
78
a = 1.57
1.9
2.2
102
2.8
4
126
0
150
0
2
4
6
8
IF(AV) / A
Fig.4. Modulator maximum forward dissipation,
P_F = f(I_F(AV)); sinusoidal current waveform; parameter
a = form factor = I_F(RMS)/I_F(AV).
IF
IFS(RMS) / A
80
BY229
70
IFSM
60
50
time
40
VF
30
VF
Fig.2. Definition of V_fr
V _fr
time
20
10
0
1ms
10ms
0.1s
1s
10s
tp / s
Fig.5. Modulator maximum non-repetitive rms forward
current. I_F = f(t_p); sinusoidal current waveform;
T_j = 150˚C prior to surge with reapplied V_RWM.
PF / W
20
Vo = 1.25 V
Rs = 0.03 Ohms
15
BY329
Ths(max) / C
54
D = 1.0
0.5
78
10
0.2
102
0.1
5
I
tp
D
=
tp
T
126
T
t
0
150
0
2
4
6
8
10
12
IF(AV) / A
Fig.3. Modulator maximum forward dissipation,
P_F = f(I_F(AV)); square wave current waveform;
parameter D = duty cycle = t_p/T.
IF / A
30
Tj = 150 C
Tj = 25 C
20
BY229F
10
typ
max
0
0
0.5
1
1.5
2
VF / V
Fig.6. Modulator typical and maximum forward
characteristic; I_F = f(V_F); parameter T_j
December 1999
3
Rev 1.200