BYD73 Datasheet, PDF (3/11 Pages) NXP Semiconductors – Ultra fast low-loss controlled avalanche rectifiers

Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
BYD73 series
SYMBOL
PARAMETER
I_FRM
repetitive peak forward current
BYD73A to D
BYD73E to G
I_FRM
repetitive peak forward current
BYD73A to D
BYD73E to G
I_FSM
non-repetitive peak forward current
E_RSM
T_stg
T_j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
CONDITIONS
T_tp = 55 °C; see Figs 6 and 7
T_amb = 60 °C; see Figs 8 and 9
t = 10 ms half sine wave;
T_j = T_{j max} prior to surge;
V_R = V_RRMmax
L = 120 mH; T_j = T_{j max} prior to
surge; inductive load switched off
MIN. MAX. UNIT
−
14 A
−
15 A
−
8.5 A
−
9.5 A
−
25 A
−
10 mJ
−65
+175 °C
−65
+175 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
V_F
V_(BR)R
I_R
forward voltage
BYD73A to D
BYD73E to G
forward voltage
BYD73A to D
BYD73E to G
reverse avalanche breakdown
voltage
BYD73A
BYD73B
BYD73C
BYD73D
BYD73E
BYD73F
BYD73G
reverse current
t_rr
reverse recovery time
BYD73A to D
BYD73E to G
CONDITIONS
I_F = 1 A; T_j = T_{j max};
see Figs 12 and 13
I_F = 1 A;
see Figs 12 and 13
I_R = 0.1 mA
MIN.
−
−
−
−
55
110
165
220
275
330
440
V_R = V_RRMmax;
−
see Fig.14
V_R = V_RRMmax;
−
T_j = 165 °C; see Fig.14
when switched from
I_F = 0.5 A to I_R = 1 A;
−
measured at I_R = 0.25 A;
see Fig.18
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
0.75 V
0.83 V
0.98 V
1.05 V
−V
−V
−V
−V
−V
−V
−V
1 µA
100 µA
25 ns
50 ns
1996 Sep 18
3