BYD72 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Ultra fast low-loss controlled avalanche rectifiers

Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifiers
Preliminary specification
BYD72 series
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
BYD72A to D
BYD72E to G
I_R
reverse current
t_rr
V_FRM
reverse recovery time
BYD72A to D
BYD72E to G
forward recovery voltage
BYD72A to D
BYD72E to G
CONDITIONS
I_F = 1 A; see Figs 4 and 5
V_R = V_RRMmax
V_R = V_RRMmax; T_j = 165 °C; see Fig.6
when switched from I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25 A; see Fig.9
when switched to I_F = 1 A in 50 ns
MAX. UNIT
0.98 V
1.05 V
1 µA
100 µA
25 ns
50 ns
1.55 V
3.40 V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-a}
thermal resistance from junction to ambient
note 1
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer ≥40 µm,
pitch 5 mm; see Fig.8.
1998 Dec 03
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