BYD71 Datasheet, PDF (3/11 Pages) NXP Semiconductors – Ultra fast low-loss controlled avalanche rectifiers

Philips Semiconductors
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
BYD71 series
SYMBOL
PARAMETER
I_FRM
repetitive peak forward current
BYD71A to D
BYD71E to G
I_FRM
repetitive peak forward current
BYD71A to D
BYD71E to G
I_FSM
non-repetitive peak forward current
P_RSM
T_stg
T_j
non-repetitive peak reverse power
dissipation
BYD71A to D
BYD71E to G
storage temperature
junction temperature
CONDITIONS
T_tp = 55 °C; see Figs 6 and 7
T_amb = 60 °C; see Figs 8 and 9
t = 10 ms half sine wave;
T_j = T_{j max} prior to surge;
V_R = V_RRMmax
t = 20 µs half sine wave; T_j = T_{j max}
prior to surge
MIN.
−
−
−
−
−
−
−
−65
−65
MAX. UNIT
4.7 A
5.0 A
3.7 A
3.9 A
7A
250 W
150 W
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
V_F
V_(BR)R
I_R
forward voltage
BYD71A to D
BYD71E to G
forward voltage
BYD71A to D
BYD71E to G
reverse avalanche breakdown
voltage
BYD71A
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
reverse current
t_rr
reverse recovery time
BYD71A to D
BYD71E to G
CONDITIONS
I_F = 0.5 A; T_j = T_{j max};
see Figs 12 and 13
I_F = 0.5 A;
see Figs 12 and 13
I_R = 0.1 mA
V_R = V_RRMmax;
see Fig 14
V_R = V_RRMmax;
T_j = 165 °C; see Fig 14
when switched from
I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25 A
see Fig 18
MIN.
−
−
−
−
55
110
165
220
275
330
440
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
MAX. UNIT
0.84 V
0.90 V
1.05 V
1.11 V
−V
−V
−V
−V
−V
−V
−V
1 µA
75 µA
25 ns
50 ns
1996 Sep 19
3
Not recommended for new designs