BYD47 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Fast soft-recovery controlled avalanche rectifiers

Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD47 series
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
t_rr
reverse recovery time
C_d
diode capacitance
-d-d--I--t^R--
maximum slope of reverse recovery
current
CONDITIONS
I_F = 1 A; T_j = T_{j max}; see Fig.8
I_F = 1 A; see Fig.8
V_R = V_RRMmax;
see Fig.9
V_R = V_RRMmax; T_j = 125 °C;
see Fig.9
when switched from I_F = 0.5 A to
I_R = 1 A; measured at I_R = 0.25 A;
see Fig.12
f = 1 MHz; V_R = 0 V; see Fig.10
when switched from I_F = 1 A to
V_R ≥ 30 V and dI_F/dt = −1 A/µs;
see Fig.13
TYP.
−
−
−
−
−
15
−
MAX.
2.05
2.40
5
UNIT
V
V
µA
50 µA
300 ns
− pF
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the “General Part of associated Handbook”.
1999 Nov 11
3