BYD37 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Fast soft-recovery controlled avalanche rectifiers

Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD37 series
SYMBOL
PARAMETER
E_RSM
non-repetitive peak reverse
avalanche energy
BYD37D to J
BYD37K and M
T_stg
storage temperature
T_j
junction temperature
CONDITIONS
L = 120 mH; T_j = T_{j max} prior to
surge; inductive load switched off
see Fig.7
MIN. MAX. UNIT
−
10 mJ
−
7 mJ
−65
+175 °C
−65
+175 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
V_(BR)R
I_R
reverse avalanche breakdown
voltage
BYD37D
BYD37G
BYD37J
BYD37K
BYD37M
reverse current
t_rr
reverse recovery time
BYD37D to J
BYD37K and M
C_d
diode capacitance
-d-d--I--t^R--
maximum slope of reverse recovery
current
BYD37D to J
BYD37K and M
CONDITIONS
I_F = 1 A; T_j = T_{j max};
see Fig.8
I_F = 1 A;
see Fig.8
I_R = 0.1 mA
V_R = V_RRMmax; see Fig.9
V_R = V_RRMmax;
T_j = 165 °C; see Fig.9
when switched from
I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25A;
see Fig.12
f = 1 MHz; V_R = 0;
see Fig.10
when switched from
I_F = 1 A to V_R ≥ 30 V and
dI_F/dt = −1 A/µs;
see Fig.13
MIN.
−
−
300
500
700
900
1 100
−
−
−
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
−
20
−
−
MAX. UNIT
1.1 V
1.3 V
−V
−V
−V
−V
−V
1 µA
100 µA
250 ns
300 ns
− pF
6 A/µs
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the “General Part of associated Handbook”.
1999 Nov 16
3