BYD31 Datasheet, PDF (3/9 Pages) NXP Semiconductors – Fast soft-recovery controlled avalanche rectifiers

Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD31 series
SYMBOL
PARAMETER
P_RSM
non-repetitive peak reverse power
dissipation
BYD31D to J
BYD31K and M
T_stg
storage temperature
T_j
junction temperature
CONDITIONS
t = 20 µs half sine wave; T_j = T_{j max}
prior to surge
see Fig.7
MIN.
−
−
−65
−65
MAX. UNIT
100 W
50 W
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
V_(BR)R
I_R
reverse avalanche breakdown
voltage
BYD31D
BYD31G
BYD31J
BYD31K
BYD31M
reverse current
t_rr
reverse recovery time
BYD31D to J
BYD31K and M
C_d
diode capacitance
-d-d--I--t^R--
maximum slope of reverse recovery
current
BYD31D to J
BYD31K and M
CONDITIONS
I_F = 0.5 A; T_j = T_{j max};
see Fig.8
I_F = 0.5 A;
see Fig.8
I_R = 0.1 mA
V_R = V_RRMmax;
see Fig.9
V_R = V_RRMmax;
T_j = 165 °C; see Fig.9
when switched from
I_F = 0.5 A to I_R = 1 A;
measured at I_R = 0.25A
see Fig.12
f = 1 MHz; V_R = 0 V;
see Fig.10
when switched from
I_F = 1 A to V_R ≥ 30 V
and dI_F/dt = −1 A/µs;
see Fig.13
MIN.
−
−
TYP.
−
−
300
−
500
−
700
−
900
−
1 100
−
−
−
−
−
−
−
−
−
−
9
−
−
−
−
MAX. UNIT
1.15 V
1.35 V
−V
−V
−V
−V
−V
1 µA
75 µA
250 ns
300 ns
− pF
6 A/µs
5 A/µs
1996 Sep 18
3
Not recommended for new designs