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BYD17 Datasheet, PDF (3/8 Pages) NXP Semiconductors – General purpose controlled avalanche rectifiers | |||
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Philips Semiconductors
General purpose
controlled avalanche rectiï¬ers
Product speciï¬cation
BYD17 series
SYMBOL
PARAMETER
IF(AV)
average forward current
IFSM
non-repetitive peak forward current
ERSM
Tstg
Tj
non-repetitive peak reverse avalanche
energy
storage temperature
junction temperature
CONDITIONS
Ttp = 105 °C;
averaged over any 20 ms period;
see Figs 2 and 4
Tamb = 65 °C; PCB mounting (see
Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
see Fig.5
MIN.
â
â
â
â
â65
â65
MAX. UNIT
1.5 A
0.6 A
20 A
7 mJ
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
VF
V(BR)R
IR
trr
Cd
forward voltage
reverse avalanche
breakdown voltage
IF = 1 A; Tj = Tj max; see Fig.6
IF = 1 A; see Fig.6
IR = 0.1 mA
BYD17D
BYD17G
BYD17J
BYD17K
BYD17M
reverse current
reverse recovery time
diode capacitance
VR = VRRMmax; see Fig.7
VR = VRRMmax; Tj = 165 °C; see Fig.7
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.10
VR = 0 V; f = 1 MHz; see Fig.8
MIN.
â
â
225
450
650
900
1 100
â
â
â
â
TYP.
â
â
MAX. UNIT
0.93 V
1.05 V
â
âV
â
âV
â
âV
â
âV
â
âV
â
1 µA
â 100 µA
3
â µs
21
â pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30 K/W
150 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper â¥40 µm, see Fig.9.
For more information please refer to the âGeneral Part of associated Handbookâ.
1999 Nov 11
3
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