BYC8B-600P_15 Datasheet, PDF (3/9 Pages) NXP Semiconductors – Hyperfast power diode

NXP Semiconductors
BYC8B-600P
Hyperfast power diode
Symbol
T_stg
T_j
24
P_tot
(W)
16
8
Parameter
storage temperature
junction temperature
Conditions
t_p = 8.3 ms; T_j(init) = 25 °C; sine-wave
pulse; Fig. 4
Min Max Unit
-
100 A
-65 175 °C
-
175 °C
0.2
0.1
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δ=1
0.5
20
P_tot
(W)
16
12
8
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a = 1.57
1.9
2.2
2.8
4.0
4
0
0
4
8
12
I_F(AV) (A)
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0
0
2
4
6
8
I_F(AV) (A)
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
12
I_F(AV)
(A)
8
4
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130 °C
10⁴
I_FSM
(A)
10³
10²
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P
t_p
t
0
-50
0
50
100
150
200
T_mb (°C)
Fig. 3. Average forward current as a function of
mounting base temperature; maximum values
10
10^-5
10^-4
10^-3
10^-2
t_p (s)
Fig. 4.
Non-repetitive peak forward current as a
function of pulse width; square waveform;
maximum values
BYC8B-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 February 2014
© NXP N.V. 2014. All rights reserved
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