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BYC5-600P_15 Datasheet, PDF (3/11 Pages) NXP Semiconductors – Hyperfast power diode
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NXP Semiconductors
BYC5-600P
Hyperfast power diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
VRWM
crest working reverse voltage
VR
reverse voltage
DC
IF(AV)
average forward current
δ = 0.5; Tmb ≤ 133 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
IFRM
repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 133 °C;
square-wave pulse
IFSM
non-repetitive peak forward
tp = 10 ms; Tj(init) = 25 °C; sine-wave
current
pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
Tstg
storage temperature
Tj
junction temperature
Min Max Unit
-
600 V
-
600 V
-
600 V
-
5
A
-
10
A
-
60
A
-
65
A
-65 175 °C
-
175 °C
20
Ptot
(W)
16
12
8
aaa-015780
0.5
0.2
0.1
δ=1
15
Ptot
(W)
12
9
6
aaa-015782
a = 1.57
1.9
2.2
2.8
4.0
4
3
0
0
2
4
6
8
IF(AV) (A)
IF(AV) = IF(RMS) × √δ
Vo = 1.801 V; Rs = 0.062 Ω
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0
0
1
2
3
4
5
IF(AV) (A)
a = form factor = I F(RMS) / IF(AV)
Vo = 1.801 V; Rs = 0.062 Ω
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYC5-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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