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BYC10-600CT_15 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Dual rectifier diode ultrafast, low switching loss
1;3 Semiconductors
Rectifier diode
ultrafast, low switching loss
Product specification
BYC10-600CT
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C, per diode unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
IF = 5 A; Tj = 150˚C
IF = 10 A; Tj = 150˚C
IF = 5 A;
VR = 600 V
VR = 500 V; Tj = 100 ˚C
trr
Reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs
trr
Reverse recovery time
IF = 5 A; VR = 400 V;
dIF/dt = 500 A/μs
trr
Reverse recovery time
IF = 5 A; VR = 400 V;
dIF/dt = 500 A/μs; Tj = 100˚C
Irrm
Peak reverse recovery current IF = 5 A; VR = 400 V;
dIF/dt = 50 A/μs; Tj = 125˚C
Irrm
Peak reverse recovery current IF = 5 A; VR = 400 V;
dIF/dt = 500 A/μs; Tj = 125˚C
Vfr
Forward recovery voltage
IF = 10 A; dIF/dt = 100 A/μs
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
1.4
1.75
2.0
9
0.9
30
19
25
0.7
8
9
MAX.
1.75
2.2
2.9
100
3.0
50
-
UNIT
V
V
V
μA
mA
ns
ns
30 ns
3
A
11
A
11
V
IL
Vin
150 uH
typ
ID
Vo = 400 V d.c.
OUTPUT DIODE
500 V MOSFET
Vin Vin = 400 V d.c.
IR IF
inductive load
IL
Fig.1. Typical application, output rectifier in boost
converter power factor correction circuit. Continuous
conduction mode, where the transistor turns on whilst
forward current is still flowing in the diode.
Fig.2. Typical application, freewheeling diode in half
bridge converter. Continuous conduction mode, where
each transistor turns on whilst forward current is still
flowing in the other bridge leg diode.
March 2001
2
Rev 1.200