BY8200 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Ultra fast high-voltage soft-recovery controlled avalanche rectifiers

Philips Semiconductors
Ultra fast high-voltage soft-recovery
controlled avalanche rectifiers
Product specification
BY8200 series
SYMBOL
PARAMETER
CONDITIONS
I_F(AV)
I_FRM
T_stg
T_j
average forward current
BY8206
BY8208
BY8210
BY8212
repetitive peak forward current
storage temperature
junction temperature
BY8206
BY8208
BY8210
BY8212
averaged over any
20 ms period; see Figs 2 to 5
note 1
Note
1. Withstands peak currents during flash-over in a picture tube.
MIN. MAX. UNIT
−
10 mA
−
5 mA
−
5 mA
−
5 mA
−
500 mA
−65 +175 °C
−65 +160 °C
−65 +155 °C
−65 +150 °C
−65 +145 °C
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_F
forward voltage
BY8206
I_F = 10 mA; see Figs 6 to 9
BY8208
BY8210
BY8212
I_R
reverse current
Q_r
recovery charge
V_R = V_RRM1; T_j = 120 °C
when switched from I_F = 100 mA to
V_R ≥ 100 V and dI_F/dt = −200 mA/µs;
see Fig 10
t_rr
reverse recovery time when switched from I_F = 2 mA to
I_R = 4 mA; measured at I_R = 1 mA;
see Fig 11
C_d
diode capacitance
V_R = 0 V; f = 1 MHz
BY8206
BY8208
BY8210
BY8212
MIN.
−
−
−
−
−
−
−
−
−
−
−
TYP. MAX. UNIT
−
19 V
−
23 V
−
29 V
−
35 V
−
3 µA
0.2
− nC
−
< 45 ns
0.50
− pF
0.42
− pF
0.35
− pF
0.30
− pF
1998 Jul 16
3