BY505 Datasheet, PDF (3/6 Pages) NXP Semiconductors – High-voltage soft-recovery rectifier

Philips Semiconductors
High-voltage soft-recovery rectifier
Product specification
BY505
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_F
forward voltage
I_R
reverse current
Q_r
recovery charge
I_F = 100 mA; T_j = T_{j max}; see Fig.5
V_R = V_RWmax; T_j = T_{j max}
when switched from I_F = 100 mA to
V_R ≥ 100 V and dI_F/dt = −200 mA/µs;
see Fig.7
t_f
fall time
when switched from I_F = 100 mA to
V_R ≥ 100 V and dI_F/dt = −200 mA/µs;
see Fig.7
t_rr
reverse recovery time when switched from I_F = 100 mA to
V_R ≥ 100 V and dI_F/dt = −200 mA/µs;
see Fig.7
C_d
diode capacitance
V_R = 0 V; f = 1 MHz
MIN.
−
−
−
100
−
−
TYP.
−
−
−
−
200
2
MAX.
8.5
3
1
UNIT
V
µA
nC
− ns
− ns
− pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
100
K/W
155
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.6.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3