BY328 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Damper diode

Philips Semiconductors
Damper diode
Product specification
BY328
ELECTRICAL CHARACTERISTICS
T_j = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse current
t_rr
reverse recovery time
t_fr
forward recovery time
CONDITIONS
I_F = 5 A; T_j = T_{j max}; see Fig.3
I_F = 5 A; see Fig.3
V_R = V_Rmax; T_j = 150 °C
when switched from I_F = 0.5 A to
I_R = 1 A; measured at I_R = 0.25 A;
see Fig.6
when switched to I_F = 5 A in 50 ns;
T_j = T_{j max}; see Fig.7
MAX.
1.35
1.45
150
500
UNIT
V
V
µA
ns
500 ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-tp}
R_{th j-a}
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
mounted as shown in Fig.5
VALUE
25
75
40
UNIT
K/W
K/W
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.4.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 30
3