BUK764R0-55B Datasheet, PDF (3/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/764R0-55B
TrenchMOS™ standard level FET
120
Pder
(%)
80
03na19
40
0
0
50
100
150
200
Tmb _(°C)
P_der = _P-------^P----^t--^o---^t------- × 100%
t o t ( 25 ^°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
200
ID
(A)
150
03ng54
100
Capped at 75 A due to package
50
0
25 50 75 100 125 150 175 200
Tmb (ºC)
V_GS ≥ 10 V
Fig 2. Continuous drain current as a function of
mounting base temperature.
103
ID
(A)
102
10
Limit RDSon = VDS/ID
Capped at 75 A due to package
DC
03ng55
tp = 10 µs
100 µs
1 ms
10 ms
100 ms
1
10-1
1
10
102
VDS (V)
T_mb = 25 °C; I_DM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10276
Product data
Rev. 02 — 30 September 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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