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BUK7607-30B_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
BUK7607-30B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
-
RGS = 20 kΩ
-
-20
Tmb = 100 °C; VGS = 10 V; see Figure 1 [1] -
Tmb = 25 °C; VGS = 10 V; see Figure 3 [2] -
[1] -
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs;
-
see Figure 3
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
Tstg
storage temperature
-55
Tj
junction temperature
-55
Source-drain diode
IS
source current
Tmb = 25 °C
[1] -
[2] -
ISM
peak source current
Avalanche ruggedness
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
EDS(AL)S
non-repetitive drain-source
avalanche energy
ID = 75 A; Vsup ≤ 30 V; RGS = 50 Ω;
-
VGS = 10 V; Tj(init) = 25 °C; unclamped
[1] Continuous current is limited by package.
[2] Current is limited by power dissipation chip rating.
Max Unit
30 V
30 V
20 V
75 A
108 A
75 A
435 A
157 W
175 °C
175 °C
75 A
108 A
435 A
329 mJ
120
ID
(A)
80
03nm94
Capped at 75 A due to package
120
Pder
(%)
80
03na19
40
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
BUK7607-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 February 2011
© NXP B.V. 2011. All rights reserved.
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