BUK482-100A Datasheet, PDF (3/8 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product Specification
BUK482-100A
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_amb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_amb); conditions: V_GS ≥ 10 V
Zth j-amb / (K/W)
1E+02
D=
0.5
BUKX82-100
1E+01 ^0.2
0.1
0.05
0.02
1E+00
P
tp
D
D = ^tp
T
1E-01
0
t
T
1E-02
1E-07
1E-05
1E-03 1E-01
t/s
1E+01 1E+03
Fig.3. Transient thermal impedance.
Z_{th j-amb} = f(t); parameter D = t_p/T
ID / A
10
BUK482-100A
tp = 10 us
100 us
1 ms
1
10 ms
DC
100 ms
0.1
1s
10 s
0.01
0.1
1
10
100
VDS / V
Fig.4. Safe operating area. T_amb = 25 ˚C.
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
ID / A
7
20
6
6 ¹⁰
6.5
5
BUK482-100A
VGS/V = 5.5
4
5
3
2
4.5
1
4
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
1
RDS(ON)/ Ohm
4
4.5
5
0.9
BUK482-100A
5.5
0.8
0.7
0.6
0.5
0.4
VGS/V = 6
0.3
10
0.2
20
0.1
0
0
2
4
6
ID / A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
January 1998
3
Rev 1.100