BUK481-60A Datasheet, PDF (3/8 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK481-60A
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_amb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0
20 40 60 80 100 120 140
Tamb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_amb); conditions: V_GS ≥ 10 V
Zth j-amb / (K/W)
1E+02 _{D =}
0.5
BUKX81
0.2
1E+01 _0.1
0.05
0.02
1E+00
P
tp
D
D = ^tp
T
1E-01
t
T
1E-02
1E-07
1E-05
1E-03 1E-01
t/s
1E+01 1E+03
Fig.3. Transient thermal impedance.
Z_{th j-amb} = f(t); parameter D = t_p/T
10 ^{ID / A}
1
DC
0.1
BUK481-60A
tp = 10 us
100 us
1 ms
10 ms
100 ms
1s
10 s
0.01
0.1
1
10
100
VDS / V
Fig.4. Safe operating area T_amb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
ID / A
5 ₁₅
10
4
BUK481-60A
7
6.5
3
6
2
5.5
1
5
VGS / V = 4.5
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
1
BUK481-60A
0.9
0.8
5
5.5
6
6.5
0.7
7
0.6
0.5
0.4
0.3
10
0.2
VGS / V = 15 V
0.1
0
0
1
2
3
4
5
ID / A
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
November 1995
3
Rev 1.100