BUK473-100A Datasheet, PDF (3/7 Pages) NXP Semiconductors – PowerMOS transistor Isolated version of BUK453-100A/B

Philips Semiconductors
PowerMOS transistor
Product specification
BUK473-100A/B
AVALANCHE LIMITING VALUE
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
W_DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I_D = 14 A ; V_DD ≤ 50 V ;
V_GS = 10 V ; R_GS = 50 Ω
MIN. TYP. MAX. UNIT
-
-
70 mJ
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_hs)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_hs); conditions: V_GS ≥ 10 V
ID / A
100
10
RDS(ON) ^{= VDS/ID}
A
B
1
DC
BUK443-100
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.1
1
10
100
VDS / V
Fig.3. Safe operating area. T_hs = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth j-hs / (K/W)
1E+01
ZTHX43
0.5
1E+00 0.2
0.1
0.05
1E-01 ^0.02
P_D
tp
D
=
tp
T
0
1E-02
1E-07 1E-05
1E-03
t/s
T
t
1E-01 1E+01
Fig.4. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
November 1996
3
Rev 1.200