BUK462-60A Datasheet, PDF (3/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK462-60A
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 10 V
ID / A
100
BUK452-60
A
tp = 10 us
10
100 us
DC
1 ms
10 ms
100 ms
1
1
10
100
VDS / V
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth j-mb / (K/W)
1E+01
BUKX52
1E+00 ^0.5
0.2
0.1
0.05
1E-01 _0.02
0
1E-02
1E-07 1E-05
P_D
tp
D
=
tp
T
1E-03
t/s
T
t
1E-01 1E+01
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
30 ^{ID / A}
20 15
BUK452-50A
VGS / V = 10
20
8
7
10
6
5
0
4
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
BUK452-50A
0.5
5
6
7
8
0.4
VGS / V = 10
0.3
0.2
0.1
20
0
0
Fig.6.
4
8 12 16 20 24 28
ID / A
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
February 1996
3
Rev 1.000