BUK462-100A Datasheet, PDF (3/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product specification
BUK462-100A
120 ^PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_mb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_mb); conditions: V_GS ≥ 10 V
ID / A
100
A
10
RDS(ON) ^{= VDS/ID}
DC
1
BUK452-100
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.1
1
10
100
VDS / V
Fig.3. Safe operating area. T_mb = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth j-mb / (K/W)
1E+01
BUKX52
1E+00 ^0.5
0.2
0.1
0.05
1E-01 _0.02
0
1E-02
1E-07 1E-05
P_D
tp
D
=
tp
T
1E-03
t/s
T
t
1E-01 1E+01
Fig.4. Transient thermal impedance.
Z_{th j-mb} = f(t); parameter D = t_p/T
ID / A
20
20
15
VGS / V =
10
15
BUK452-100A
8
7
10
6
5
5
4
0
0
2
4
6
8
10
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
1.0
4.5 5 5.5 6
0.8
0.6
BUK452-100A
6.5
VGS / V =
7 7.5
8
10
0.4
20
0.2
0
0
Fig.6.
2 4 6 8 10 12 14 16 18 20
ID / A
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
April 1998
3
Rev 1.000