BUK446-1000B Datasheet, PDF (3/7 Pages) NXP Semiconductors – PowerMOS transistor

Philips Semiconductors
PowerMOS transistor
Product Specification
BUK446-1000B
120 ^PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅P_D/P_{D 25 ˚C} = f(T_hs)
ID%
120
110
Normalised Current Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅I_D/I_{D 25 ˚C} = f(T_hs); conditions: V_GS ≥ 10 V
ID / A
10
RDS(ON) ^{= VDS/ID}
1
DC
0.1
BUK446-1000B
tp = 10 us
100 us
1 ms
10 ms
100 ms
0.01
10
100
1000
VDS / V
Fig.3. Safe operating area. T_hs = 25 ˚C
I_D & I_DM = f(V_DS); I_DM single pulse; parameter t_p
Zth / (K/W)
10
D=
0.5
1
0.2
0.1
0.05
0.1 _0.02
BUKx46-hv
0.01
0
P_D
tp
D
=
tp
T
0.001
1E-07
1E-05
1E-03
t/s
T
t
1E-01
1E+01
Fig.4. Transient thermal impedance.
Z_{th j-hs} = f(t); parameter D = t_p/T
ID / A
6
5
BUK456-1000A
VGS / V =
10
6
4
5
3
4.8
2
4.6
1
4.4
4 4.2
0
0
4
8 12 16 20 24 28
VDS / V
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(ON) / Ohm
15
4.2 4.4 4.6
10
BUK456-1000A
4.8
VGS / V =
5
5
10
0
0
Fig.6.
1
2
3
4
ID / A
Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
May 1995
3
Rev 1.200