BUK220-50Y Datasheet, PDF (3/8 Pages) NXP Semiconductors – TOPFET high side switch SMD version of BUK219-50Y

Philips Semiconductors
TOPFET high side switch
SMD version of BUK219-50Y
Product Specification
BUK220-50Y
STATIC CHARACTERISTICS
Limits are at -40˚C ≤ T_mb ≤ 150˚C and typicals at T_mb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
Clamping voltages
V_BG
Battery to ground
V_BL
Battery to load
-V_LG
Negative load to ground
-V_LG
Negative load voltage¹
I_G = 1 mA
I_L = I_G = 1 mA
I_L = 10 mA
I_L = 1 A; t_p = 300 µs
50 55 65
V
50 55 65
V
18 23 28
V
20 25 30
V
Supply voltage
V_BG
Operating range²
battery to ground
-
5.5
-
35
V
Currents
I_B
Quiescent current³
I_L
Off-state load current⁴
I_G
Operating current⁵
I_L
Nominal load current⁶
9 V ≤ V_BG ≤ 16 V
V_LG = 0 V
V_BL = V_BG
I_L = 0 A
V_BL = 0.5 V
-
T_mb = 25˚C
-
-
T_mb = 25˚C
-
-
2
-
20 µA
0.1
2
µA
-
20 µA
0.1
1
µA
2
4 mA
-
-
A
Resistances
R_ON
On-state resistance⁷
R_ON
On-state resistance
V_BG
I_L
t_p
T_mb
9 to 35 V 1 A 300 µs 25˚C -
150˚C -
6V
1 A 300 µs 25˚C -
150˚C -
135 180 mΩ
-
330 mΩ
170 225 mΩ
-
410 mΩ
R_G
Internal ground resistance
I_G = 10 mA
95 150 190 Ω
1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.
2 On-state resistance is increased if the supply voltage is less than 9 V.
3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.
4 The measured current is in the load pin only.
5 This is the continuous current drawn from the supply with no load connected, but with the input high.
6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP.
7 The supply and input voltage for the R_ON tests are continuous. The specified pulse duration t_p refers only to the applied load current.
July 2001
3
Rev 2.000