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BUK128-50DL Datasheet, PDF (3/6 Pages) NXP Semiconductors – Logic level TOPFET SMD version of BUK117-50DL | |||
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Philips Semiconductors
Logic level TOPFET
SMD version of BUK117-50DL
Product specification
BUK128-50DL
OUTPUT CHARACTERISTICS
Limits are for -40ËC ⤠Tmb ⤠150ËC; typicals are for Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
Off-state
VIS = 0 V
V(CL)DSS Drain-source clamping voltage ID = 10 mA
50
IDM = 1 A; tp ⤠300 µs; δ ⤠0.01
50
IDSS
Drain source leakage current VDS = 40 V
-
Tmb = 25 ËC
-
On-state
IDM = 3 A; tp ⤠300 µs; δ ⤠0.01
RDS(ON)
Drain-source resistance
VIS ⥠4.4 V
-
Tmb = 25 ËC
-
VIS ⥠4 V
-
Tmb = 25 ËC
-
TYP.
-
60
-
0.1
-
68
-
72
MAX. UNIT
-
V
70
V
100 µA
10 µA
190 mâ¦
100 mâ¦
200 mâ¦
105 mâ¦
OVERLOAD CHARACTERISTICS
-40ËC ⤠Tmb ⤠150ËC unless otherwise specified.
SYMBOL PARAMETER
CONDITIONS
Short circuit load
ID
Drain current limiting
PD(TO)
TDSC
Overload protection
Overload power threshold
Characteristic time
VDS = 13 V
VIS = 5 V;
4.4 V ⤠VIS ⤠5.5 V
Tmb = 25ËC
4 V ⤠VIS ⤠5.5 V
VIS = 5 V;
Tmb = 25ËC
device trips if PD > PD(TO)
which determines trip time1
Overtemperature protection
Tj(TO)
Threshold junction
temperature2
MIN. TYP. MAX. UNIT
8
12 16
A
6
-
18
A
5
-
18
A
20 55 80 W
200 350 600 µs
150 170 -
ËC
1 Trip time td sc varies with overload dissipation PD according to the formula td sc â TDSC / ln[ PD / PD(TO) ].
2 This is independent of the dV/dt of input voltage VIS.
May 2001
3
Rev 1.800
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