BUJ403A Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ403A
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
300R
1R
6V
30-60 Hz
Fig.1. Test circuit for V_CEOsust.
IC / mA
90 %
ICon
90 %
IC
ton
IB
10 %
tr 30ns
10 %
ts
tf
toff
IBon
-IBoff
Fig.4. Switching times waveforms with resistive load.
VCC
250
200
100
0
Fig.2.
VCE / V
min
VCEOsust
Oscilloscope display for V_CEOsust.
VCC
VIM
RB
0
tp
T
RL
T.U.T.
Fig.3. Test circuit resistive load. V_IM = -6 to +8 V
V_CC = 250 V; t_p = 20 µs; δ = t_p / T = 0.01.
R_B and R_L calculated from I_Con and I_Bon requirements.
IBon
-VBB
LC
LB
T.U.T.
Fig.5. Test circuit inductive load.
V_CC = 300 V; -V_BE = 5 V; L_C = 200 uH; L_B = 1 uH
ICon
90 %
IC
10 %
ts
tf
t
toff
IB
IBon
t
-IBoff
Fig.6. Switching times waveforms with inductive load.
December 1998
3
Rev 1.200