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| BUJ103A Datasheet, PDF (3/12 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Philips Semiconductors
Silicon Diffused Power Transistor
Product speciï¬cation
BUJ103A
STATIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 1
ICES
ICBO
ICEO
IEBO
VCEOsust
VCEsat
VBEsat
hFE
hFE
hFEsat
Collector cut-off current 1
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ËC
VCBO = VCESMmax (700V)
VCEO = VCEOMmax (400V)
VEB = 7 V; IC = 0 A
IB = 0 A; IC = 10 mA;
L = 25 mH
IC = 3.0 A; IB = 0.6 A
IC = 3.0 A; IB = 0.6 A
IC = 1 mA; VCE = 5 V
IC = 500 mA; VCE = 5 V
IC = 2.0 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
MIN.
-
-
TYP.
-
-
MAX. UNIT
1.0 mA
2.0 mA
-
-
0.1 mA
-
-
0.1 mA
-
-
0.1 mA
400
-
-
V
-
0.25 1.0
V
-
0.97 1.5
V
10 17 32
12 20 32
13.5 16 20
- 12.5 -
DYNAMIC CHARACTERISTICS
Tmb = 25 ËC unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton
Turn-on time
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICon = 2.5 A; IBon = -IBoff = 0.5 A;
RL = 75 ohms; VBB2 = 4V;
ICon = 2 A; IBon = 0.4 A; LB = 1 µH;
-VBB = 5 V
ICon = 2 A; IBon = 0.4 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ËC
TYP. MAX. UNIT
0.52 0.6 µs
2.7 3.2 µs
0.3 0.43 µs
1.2 1.4 µs
33 80 ns
-
1.8 µs
-
200 ns
1 Measured with half sine-wave voltage (curve tracer).
August 1998
2
Rev 1.000
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