BU508DX Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU508DX
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
20us
26us
64us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
+ 150 v nominal
adjust for ICsat
1mH
IBend
-VBB
D.U.T.
LB
12nF
Fig.3. Switching times test circuit
h FE
100
BU508AD
10
1
0.1
Fig.4.
1
10
IC/A
Typical DC current gain. h_FE = f (I_C)
parameter V_CE
July 1998
3
Rev 1.200