BU4508AF Datasheet, PDF (3/12 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4508AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_isol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
C_isol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
- 2500 V
-
22
-
pF
STATIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
I_CES
Collector cut-off current ²
I_CES
I_EBO
BV_EBO
V_CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
V_CEsat
V_BEsat
h_FE
h_FE
Collector-emitter saturation voltages
Base-emitter saturation voltage
DC current gain
CONDITIONS
V_BE = 0 V; V_CE = V_CESMmax
V_BE = 0 V; V_CE = V_CESMmax;
T_j = 125 ˚C
V_EB = 6.0 V; I_C = 0 A
I_B = 1 mA
I_B = 0 A; I_C = 100 mA;
L = 25 mH
I_C = 5.0 A; I_B = 1.25 A
I_C = 5.0 A; I_B = 1.25 A
I_C = 100 mA; V_CE = 5 V
I_C = 5.0 A; V_CE = 5 V
MIN.
-
-
-
7.5
800
-
0.85
-
4.2
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
100 uA
13.5 -
V
-
-
V
-
3.0 V
0.94 1.03 V
12
-
5.7 7.3
DYNAMIC CHARACTERISTICS
T_hs = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
C_c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t_s
Turn-off storage time
t_f
Turn-off fall time
CONDITIONS
I_E = 0 A; V_CB = 10 V; f = 1 MHz
I_Csat = 5.0 A; I_B1 = 1.0 A;(I_B2 = -2.5 A)
TYP. MAX. UNIT
80
-
pF
3.2 4.3 µs
0.35 0.48 µs
Switching times (64 kHz line
deflection circuit)
I_Csat = 4 A; I_B1 = 0.8 A;(I_B2 = -2.0 A)
t_s
Turn-off storage time
t_f
Turn-off fall time
1.9
-
µs
0.17 -
µs
2 Measured with half sine-wave voltage (curve tracer).
June 1998
2
Rev 1.000