BU2527AX Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2527AX
+ 50v
100-200R
Horizontal
Oscilloscope
Vertical
100R
1R
6V
30-60 Hz
Fig.1. Test circuit for V_CEOsust.
IC / mA
250
200
100
0
VCE / V
min
VCEOsust
Fig.2. Oscilloscope display for V_CEOsust.
TRANSISTOR
IC
DIODE
ICsat
t
IB
I _B end
t
5 us
6.5 us
16 us
VCE
t
Fig.3. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
LB
T.U.T.
Cfb
Fig.5. Switching times test circuit.
VCC
IBend
-VBB
LC
LB
T.U.T.
VCL
CFB
Fig.6. Test Circuit RBSOA. V_CC = 140 V; -V_BB = 4 V;
L_C = 100 - 200 µH; V_CL ≤ 1500 V; L_B = 3 µH;
C_FB = 1 - 2.2 nF; I_B(end) = 1 - 2 A
September 1997
3
Rev 2.200