BU2525A Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2525A
TRANSISTOR
IC
DIODE
I_CM
t
IB
VCE
10us
13us
32us
IBend
t
t
Fig.3. Switching times waveforms.
ICM
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICM
Lc
IBend
-VBB
LB
T.U.T.
BY228
Cfb
Fig.5. Switching times test circuit (BU2525A).
hFE
100
10
1V
BU2525A
Tj = 25 C
5V
Tj = 125 C
1
0.1
Fig.6.
1
10
100
IC / A
Typical DC current gain. h_FE = f (I_C)
parameter V_CE
VBESAT / V
1.2
Tj = 25 C
1.1
Tj = 125 C
1
BU2525A
0.9
0.8
0.7
IC/IB=
3
0.6
4
0.5
5
0.4
0.1
1
10
IC / A
Fig.7. Typical base-emitter saturation voltage.
V_BEsat = f (I_C); parameter I_C/I_B
VCESAT / V
1
0.9
0.8
0.7
0.6
IC/IB =
5
4
3
BU2525A
0.5
Tj = 25 C
0.4
Tj = 125 C
0.3
0.2
0.1
0
0.1
1
10
100
IC / A
Fig.8. Typical collector-emitter saturation voltage.
V_CEsat = f (I_C); parameter I_C/I_B
November 1995
3
Rev 1.200