BU2515DX Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU2515DX
TRANSISTOR
IC
DIODE
ICsat
t
IB
VCE
8.8us
18us
IBend
t
t
Fig.1. Switching times waveforms.
ICsat
90 %
IC
ts
IB
IBend
10 %
tf
t
t
- IBM
Fig.2. Switching times definitions.
IF
IF
10%
t _fr
time
VF
5V
V _fr
VF
time
Fig.3. Definition of anti-parallel diode V_fr and t_fr.
+ 150 v nominal
adjust for ICsat
Lc
IBend
-VBB
D.U.T.
LB
Cfb
Rbe
Fig.4. Switching times test circuit.
hFE
100
VCE = 1 V
BU2515DF/X
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
10 _{IC / A} 100
Fig.5. High and low DC current gain. h_FE = f (I_C)
V_CE = 1 V
hFE
100
VCE = 5 V
BU2515DF/X
Ths = 25 C
Ths = 85 C
10
1
0.01
0.1
1
10 _{IC / A} 100
Fig.6. High and low DC current gain. h_FE = f (I_C)
V_CE = 5 V
September 1997
3
Rev 1.300