BTA216X Datasheet, PDF (3/5 Pages) NXP Semiconductors – Three quadrant triacs guaranteed commutation

Philips Semiconductors
Three quadrant triacs
guaranteed commutation
Objective specification
BTA216X series D, E and F
DYNAMIC CHARACTERISTICS
T_j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BTA216X- ...D ...E ...F
dV_D/dt
Critical rate of rise of
off-state voltage
V_DM = 67% V_DRM(max);
30 60 70
-
T_j = 110 ˚C; exponential
waveform; gate open
circuit
dI_com/dt Critical rate of change of V_DM = 400 V; T_j = 110 ˚C; 1.8 3.5 4.5
-
commutating current
I_T(RMS) = 16 A;
dV_com/dt = 20v/µs; gate
open circuit
- V/µs
- A/ms
dI_com/dt Critical rate of change of V_DM = 400 V; T_j = 110 ˚C; 4.3 5.3 6.3
-
commutating current
I_T(RMS) = 16 A;
dV_com/dt = 0.1v/µs; gate
open circuit
- A/ms
t_gt
Gate controlled turn-on I_TM = 20 A; V_D = V_DRM(max); -
-
-
2
-
µs
time
I_G = 0.1 A; dI_G/dt = 5 A/µs
October 1999
3
Rev 1.000