BT145 Datasheet, PDF (3/6 Pages) NXP Semiconductors – Thyristors

Philips Semiconductors
Thyristors
Product specification
BT145 series
25 ^{Ptot / W}
conduction form
angle
factor
degrees
a
20
30
4
60
2.8
90
2.2
120
1.9
15
180
1.57
4
10
BT145
1.9
2.2
2.8
Tmb(max) / C100
a = 1.57
105
110
115
5
120
0
125
0
5
10
15
20
IF(AV) / A
Fig.1. Maximum on-state dissipation, P_tot, versus
average on-state current, I_T(AV), where a = form
factor = I_T(RMS)/ I_T(AV).
10000 ^{ITSM / A}
BT145
1000
IT
dI_T/dt limit
ITSM
T time
Tj initial = 25 C max
100
10us
100us
1ms
T/s
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current I_TSM, versus pulse width t_p, for
sinusoidal currents, t_p ≤ 10ms.
30 ^{IT(RMS) / A}
25
BT145
101 C
20
15
10
5
0-50
0
50
100
150
Tmb / C
Fig.3. Maximum permissible rms current I_T(RMS) ,
versus mounting base temperature T_mb.
ITSM / A
350
300
250
200
BT145
IT
ITSM
T time
Tj initial = 25 C max
150
100
50
01
10
100
1000
Number of half cycles at 50Hz
Fig.4. Maximum permissible non-repetitive peak
on-state current I_TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
50 ^{IT(RMS) / A}
BT145
40
30
20
10
0
0.01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I_T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T_mb ≤ 101˚C.
VGT(Tj)
1.6 ^{VGT(25 C)}
BT151
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
V_GT(T_j)/ V_GT(25˚C), versus junction temperature T_j.
October 1997
3
Rev 1.200