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BT138B-600-118 Datasheet, PDF (3/14 Pages) NXP Semiconductors – High blocking voltage capability
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NXP Semiconductors
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 99 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
dIT/dt
rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G-
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G-
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+
IGM
peak gate current
PGM
peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg
storage temperature
Tj
junction temperature
BT138B-600
4Q Triac
Min Max Unit
-
600 V
-
12
A
-
95
A
-
105 A
-
45
A2s
-
50
A/µs
-
50
A/µs
-
50
A/µs
-
10
A/µs
-
2
A
-
5
W
-
0.5 W
-40 150 °C
-
125 °C
BT138B-600
Product data sheet
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26 September 2013
© NXP N.V. 2013. All rights reserved
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