BST70A Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel vertical D-MOS transistor

Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
BST70A
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage (open drain)
Drain current (DC)
Drain current (peak)
Total power dissipation up to T_amb = 25 °C (note 1)
Storage temperature range
Junction temperature
V_DS
V_GSO
I_D
I_DM
P_tot
T_stg
T_j
max.
80 V
max.
20 V
max. 0.5 A
max. 1.0 A
max.
1W
− 65 to + 150 °C
max. 150 °C
THERMAL RESISTANCE
From junction to ambient (note 1)
R_{th j-a}
=
Note
1. Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for drain lead
min. 10 mm × 10 mm.
125 K/W
April 1995
3