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BLY89C Datasheet, PDF (3/11 Pages) NXP Semiconductors – VHF power transistor
Philips Semiconductors
VHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
VCESM
VCEO
VEBO
IC(AV)
ICM
Prf
Product specification
BLY89C
max
36 V
max
18 V
max
4V
max
6A
max
12 A
max
73 W
handbook,1h0alfpage
IC
(A)
MGP864
Th = 70 °C
Tmb = 25 °C
1
1
10
VCE (V)
102
Fig.2 D.C. soar.
THERMAL RESISTANCE
(dissipation 20 W; Tmb = 79 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
handbook,8h0alfpage
Prf
(W)
60
40
ΙΙΙ
derate by
0.38 W/K
ΙΙ
derate by
0.29 W/K
Ι
MGP865
20
0
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f > 1 MHz.
Rth j-mb(dc)
=
Rth j-mb(rf)
=
Rth mb-h
=
3,1 K/W
2,3 K/W
0,45 K/W
August 1986
3