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BLW81 Datasheet, PDF (3/11 Pages) NXP Semiconductors – UHF power transistor
Philips Semiconductors
UHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (d.c. or average)
Collector current (peak value); f > 1 MHz
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Storage temperature
Operating junction temperature
VCESM
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Product specification
BLW81
max
36 V
max
17 V
max
4V
max 2,5 A
max 7,5 A
max
40 W
−65 to +150 °C
max 200 °C
handbook,1h0alfpage
IC
(A)
MGP573
Tmb = 25 °C
Th = 70 °C
1
1
10
VCE (V)
102
handbook,5h0alfpage
Prf
(W)
MGP574
r.f. power dissipation
VCE ≤ 16.5 V
f > 1 MHz
40
short time operation
during
mismatch
30
derate by
0.204 W/K
continuous operation
20
10
0
0
50
Th (°C)
100
Fig.2
THERMAL RESISTANCE
From junction to mounting base
From mounting base to heatsink
Fig.3
Rth j-mb
Rth mb-h
=
4,3 K/W
=
0,6 K/W
March 1993
3