BLT71 Datasheet, PDF (3/12 Pages) NXP Semiconductors – UHF power transistor

Philips Semiconductors
UHF power transistor
Product specification
BLT71/8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to
soldering point
CONDITIONS
P_dis = 2.9 W; T_s = 60 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MAX.
40
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CES
h_FE
C_c
C_re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
open emitter; I_C = 0.5 mA
open base; I_C = 10 mA
open collector; I_E = 0.1 mA
V_CE = 8 V; V_BE = 0
V_CE = 5 V; I_C = 100 mA
V_CB = 4.8 V; I_E = i_e = 0; f = 1 MHz
V_CE = 4.8 V; I_C = 0; f = 1 MHz
MIN.
16
8
2.5
−
25
−
−
MAX.
−
−
−
0.1
−
7
5
UNIT
V
V
V
mA
pF
pF
1
handbook, halfpage
IC
(A)
MBK263
(1)
10^−₁¹_0−1
1
T_s = 115 °C.
Fig.2 DC SOAR.
10
10²
VCE (V)
handbook¹, ⁵h⁰alfpage
h _FE
100
MLD131
50
0
0
200
400
600
800
IC (mA)
V_CE = 4.8 V.
Measured under pulse conditions: t_p ≤ 300 µs; δ ≤ 0.001.
Fig.3 DC current gain as a function of collector
current; typical values.
1997 Oct 14
3