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| BLF642 Datasheet, PDF (3/12 Pages) NXP Semiconductors – Broadband power LDMOS transistor | |||
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NXP Semiconductors
BLF642
Broadband power LDMOS transistor
6. Characteristics
Table 6. Characteristics per section
Tj = 25 ï°C; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS
VGS(th)
VGSq
IDSS
IDSX
IGSS
gfs
RDS(on)
Ciss
drain-source breakdown voltage
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
VGS = 0 V; ID = 0.5 mA
VDS = 32 V; ID = 50 mA
VDS = 32 V; IDq = 250 mA
VGS = 0 V; VDS = 32 V
VGS = VGS(th) + 3.75 V;
VDS = 10 V
VGS = ï±10 V; VDS = 0 V
VDS = 10 V; ID = 2.5 A
VGS = VGS(th) + 3.75 V;
ID = 1.75 A
VGS = 0 V; VDS = 32 V;
f = 1 MHz
Coss
output capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
Crs
feedback capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
Min Typ
65 -
1.4 1.9
1.5 2.0
--
8.0 9.0
Max Unit
-V
2.4 V
2.5 V
1.4 ïA
-A
--
50 nA
- 3.3 - S
- 300 - mï
- 39 - pF
- 15 - pF
- 0.84 - pF
7. Application information
Table 7. RF performance in a common-source class-AB circuit
Th = 25 ï°C; IDq = 0.2 A.
Mode of operation
f
VDS
PL
(MHz)
(V)
(W)
CW, class-AB
1300
32
35
Gp
(dB)
> 18
ï¨D
(%)
> 59
7.1 Ruggedness in class-AB operation
The BLF642 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 32 V; f = 1300 MHz at rated load
power.
BLF642
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 22 July 2011
© NXP B.V. 2011. All rights reserved.
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