BFV421 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PNP high-voltage transistor

Philips Semiconductors
PNP high-voltage transistor
Product specification
BFV421
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_{th j-a}
thermal resistance from junction to ambient
in free air; note 1
150
K/W
Note
1. Transistor mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for collector lead minimum
10 × 10 mm.
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
C_re
f_T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
I_E = 0; V_CB = −100 V
I_E = 0; V_CB = −100 V; T_amb = 150 °C
I_C = 0; V_EB = −4 V
I_C = −10 mA; V_CE = −10 V
I_C = −50 mA; V_CE = −10 V
I_C = −30 mA; I_B = −5 mA
I_C = i_c = 0; V_CE = −25 V; f = 1 MHz
I_C = −20 mA; V_CE = −20 V;
f = 100 MHz
MIN.
−
−
−
150
20
−
−
150
MAX.
−100
−10
−100
−
−
−200
2.3
−
UNIT
nA
µA
nA
mV
pF
MHz
1999 Apr 23
3