BFT25A_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

NXP Semiconductors
BFT25A
NPN 5 GHz wideband transistor
6. Thermal characteristics
Table 6.
Symbol
R_th(j-s)
Thermal characteristics
Parameter
from junction to soldering point
Conditions
[1] T_s is the temperature at the soldering point of the collector tab.
7. Characteristics
Typ
[1] ₂₆₀
Unit
K/W
Table 7. Characteristics
T_j = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
I_CBO
collector cut-off I_E = 0 A; V_CB = 5 V
current
-
-
h_FE
DC current gain I_C = 0.5 mA; V_CE = 1 V
50
80
f_T
transition
I_C = 1 mA; V_CE = 1 V;
3.5
5
frequency
T_amb = 25 C;
f = 500 MHz
C_re
feedback
I_C = i_c = 0 A; V_CB = 1 V;
-
0.3
capacitance
f = 1 MHz
G_UM
maximum
I_C = 0.5 mA; V_CE = 1 V; ^[1] -
15
unilateral power T_amb = 25 C; f = 1 GHz
gain
F
noise figure
 = _opt; I_C = 0.5 mA;
-
1.8
V_CE = 1 V;
T_amb = 25 C; f = 1 GHz
 = _opt; I_C = 1 mA;
-
2
V_CE = 1 V;
T_amb = 25 C; f = 1 GHz
[1] G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and
G_UM
=
10
log -----------------------^S---²--¹----²---------------------- dB
1 – S₁₁ ²ï€©ï€¨1 – S₂₂ ²ï€©
Max Unit
50
nA
200
-
GHz
0.45 pF
-
dB
-
dB
-
dB
BFT25A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 12 September 2011
© NXP B.V. 2011. All rights reserved.
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