BFS19 Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN medium frequency transistor

Philips Semiconductors
NPN medium frequency transistor
Product specification
BFS19
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector cut-off current
I_EBO
emitter cut-off current
h_FE
DC current gain
V_BE
base-emitter voltage
C_c
collector capacitance
C_re
feedback capacitance
f_T
transition frequency
CONDITIONS
I_E = 0; V_CB = 20 V
I_E = 0; V_CB = 20 V; T_j = 100 °C
I_C = 0; V_EB = 5 V
I_C = 1 mA; V_CE = 10 V
I_C = 1 mA; V_CE = 10 V
I_E = 0; V_CB = 10 V; f = 1 MHz
I_C = 0 mA; V_CB = 10 V; f = 1 MHz
I_C = 1 mA; V_CE = 10 V; f = 100 MHz
VALUE
500
UNIT
K/W
MIN. TYP. MAX. UNIT
−
−
100 nA
−
−
10 µA
−
−
100 nA
65 −
225
650 −
740 mV
−
1
−
pF
−
0.85 −
pF
−
260 −
MHz
1999 Apr 15
3